The industry expects silicon carbide (SiC)-based systems to maximize efficiency, reduce size and weight to help engineers create innovative power solutions; this demand continues to grow rapidly. The application scenarios of SiC technology include electric vehicles, charging stations, smart grids, industrial power systems, and aircraft power systems. Microchip Technology Inc. today announced the introduction of smaller, lighter and more efficient SiC power modules, further enriching its power product line. With new SiC power modules and various microcontrollers and analog products, Microchip can meet customers’ needs for high-power system control, drive and power stage circuits, and provide complete system solutions.
Microchip’s SiC family includes Schottky Barrier Diode (SBD)-based commercial-grade power modules for 700V, 1200V and 1700V. In addition to providing different current and packaging solutions, the new series of power modules also feature Dual Diode, Full Bridge, Phase Leg, Dual Common Cathode and three Various topologies such as 3-Phase bridge. SiC SBD modules combine multiple SiC diode chips with options to integrate substrate and backplane materials into a single module, simplifying design, maximizing switching efficiency, reducing temperature rise and reducing system size.
Leon Gross, Vice President of Microchip’s Discrete Business Unit, said: “The application and expansion of SiC technology is the driver of current system innovation. As an industry leader, Microchip is working with customers in all market segments and around the world. We will always provide Reliable new solutions as a business focus. From product definition to product launch, our SiC technology provides superior reliability and robustness to help power system designers ensure long-term operation of power systems without system degradation performance.”
The rich and diverse 700V, 1200V and 1700V SiC SBD module product line adopts the latest generation of SiC chips from Microchip, which can maximize system reliability and robustness and ensure the life and stability of the power system. The high avalanche performance of these devices allows system designers to reduce the need for snubber circuits. Due to the stability of the body diodes of these devices, power systems can use body diodes internally to avoid performance degradation over long periods of operation. Microchip’s internal testing and third-party testing show that these devices perform better on key reliability metrics than other devices fabricated using SiC.
Microchip’s 30kW three-phase Vienna power factor correction (PFC) function, SiC discretes and SP3/SP6L module driver reference designs/driver boards help system developers shorten development cycles.
700V, 1200V and 1700V SiC SBD power modules are now released and open to order. Multiple SiC SPICE models, SiC driver board reference designs and PFC Vienna reference designs support the entire SiC product family. Microchip’s SiC products and their ancillary products are now in volume production. Microchip offers a variety of die and package options for SiC MOSFETs and SiC diodes.
For more information, please contact a Microchip sales representative or authorized distributor worldwide, or visit Microchip’s SiC product website. To purchase the products mentioned in this article, please contact an authorized Microchip distributor.
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